TPM2025

Automotive Dual-Channel Ultra-Highspeed GaN Predriver

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Overview
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Overview

The TPM2025 / TPM2025Q family are low-side dual- channel ultra-highspeed gate drivers for GaN and logic-level MOSFETs. It is optimized for high-speed applications such as Lidar and high-density power convertors with enhanced low propagation delay design. The TPM2025’s 2-mm×2-mm flip-chip QFN package minimizes parasitic inductance in the gate driver power loop and achieves state-of-the-art narrow pulse width as short as 0.69 ns. Channel independent transient suppressors ensure reliable operation with ultra-fast high-current output pulses.

Status

Production
Rating

Industrial
VIN (V)

4.75~5.25
Channel

2
Max Output Current (A)

7
Input Voltage Range (V)

0~5
Junction Temperature Range (℃)

-40 to +150
Rise/Fall Time (ns)

0.45/0.45
Propagation Delay (ns)

2
Delay Matching (ns)

0.05
Package

QFN2X2-10

Development Resources

Documentation

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Documentation
- Data Sheet
- Selection Guide
- Application Note
- Technical Note
- User Guide
- Test Report
- Document Name
- Type
- Language
- Date
- Datasheet_TPM2025-TPM2025Q
  
  Data Sheet
  
  English
  
  02/02/2024
  
  Automotive Dual-Channel Ultra-Highspeed GaN Predriver
- Introduction to Latch-up and the Preventive Measures
  
  Technical Note
  
  English
  
  01/19/2024
- Application Tips on ESD-EOS
  
  Technical Note
  
  English
  
  01/19/2024
- 3PEAK Analog Products Selection Guide
  
  Selection Guide
  
  English
  
  01/19/2024